TOSHIBA ANNOUNCES FIRST MOSFETS IN HIGHER EFFICIENCY, SIXTH- GENERATION HIGH SPEED PROCESS FOR DC-DC CONVERTERS
First Devices in UMOS VI-H Series, Targeted for Notebook Computers and other Synchronous DC-DC Applications, Achieve Higher Power Efficiency through Lower On-State Resistance and Reduced Gate Charge
IRVINE, Calif., Feb. 25, 2008 Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, has expanded its power semiconductor lineup with the first products in a new family of high-speed switching MOSFETs based on UMOS VI-H, the latest (sixth) generation trench process in the Toshiba fast switching series, which enables a significant reduction in gate switch charge and on-state resistance (RDS(ON)), resulting in greater power efficiency.
Developed by Toshiba Corp., the two new MOSFETs, TPCA8028-H and TPC8035-H, are intended for use in for high efficiency DC-DC converter applications in notebook PCs and other electronic applications. The two devices achieve lower RDS(ON) than was possible with the previous generation technology, as well as fast switching, enabled through lower gate charge (QSW) and lower gate resistance (RG). The new MOSFETs also feature Aluminum Strap (Al-Strap) connections instead of conventional wire bond technology to further reduce RDS(ON).
The TPCA8028-H is well-suited for use as a low-side MOSFET in DC-DC converter applications, and features drain-source voltage (VDSS) of 30V (max.), drain current (ID) of 50A (max.), RDS(ON) of only 2.0milliohm1 (mΩ) (typ.), and low profile SOP Advance packaging from Toshiba, which measures 5mm x 6mm x 0.95mm.
The TPC8035-H, a similar device in SOP-8 packaging measuring 5mm x 6mm x1.6mm, features VDSS of 30V (max.), ID of 18A (max.), and RDS(ON) of only 2.3mΩ1 (typ.).
"The addition of these sixth-generation high-speed MOSFETs to our portfolio of solutions for synchronous DC-DC converters provides power subsystem designers with more options to continue to improve power efficiency," said Jeff Lo, business development manager, power semiconductor products, for TAEC. "For example, in tests using our TPCA8028-H UMOS VI-H MOSFET in a low-side MOSFET application, we were able to exceed 89 percent efficiency2, a level of performance that required two of our previous-generation MOSFETs in parallel to obtain comparable results. This latest UMOS VI generation further pushes the performance to cost envelope.
